Phonon density of states of bulk gallium nitride

Localized surface phonon polariton resonances in polar gallium nitride

Kaijun Feng, William Streyer, S. M. Islam, Jai Verma, Debdeep Jena, Daniel Wasserman, and Anthony J. Hoffman Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, USA School of Electrical and Computer Engineering, Cornell University, Ithaca...

RAMACHANDRAN , RAMYA . Investigation of Surface States in Gallium Nitride

RAMACHANDRAN, RAMYA. Investigation of Surface States in Gallium Nitride Devices using a New High Frequency Measurement Technique. (Under the direction of Dr. Douglas W. Barlage). Surface states place a limitation on the high-frequency behavior of Gallium Nitride devices by causing RF dispersion. They are also a source of undesirable 1/f noise. This thesis specifically aims to explore techniques...

Crystallographic alignment of high-density gallium nitride nanowire arrays.

Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a ...

Ultralow wear of gallium nitride

Development of Gallium Nitride Substrates

Prominent progress has been made in nitride semiconductor since high bright blue LED has developed in 1993. It has also expanded to an industry after applied to white LED. These LEDs are produced by the epitaxial growth of nitride semiconductor layers on sapphire (a Al2O3) substrate. On the other hand, recording density in optical disks has increased from CD in 1980s to DVD in latter 1990s. Las...